楊志雄，男，湖南邵陽人，1988年出生，工學(xué)博士。2010年畢業(yè)于中南大學(xué)物理科學(xué)與技術(shù)學(xué)院，獲應(yīng)用物理學(xué)學(xué)士學(xué)位，2014年畢業(yè)于中南大學(xué)物理與電子學(xué)院，獲物理學(xué)碩士學(xué)位，2020年畢業(yè)于中南大學(xué)粉末冶金研究院，獲材料科學(xué)與工程博士學(xué)位。2020年6月進(jìn)入長(zhǎng)沙理工大學(xué)物理與電子科學(xué)學(xué)院。參與過湖南省杰出青年科學(xué)基金項(xiàng)目(2015JJ1020)；國(guó)家自然科學(xué)基金面上項(xiàng)目(51272291)等科研項(xiàng)目。

主要研究方向：

二維材料及其器件的第一性原理研究。

已發(fā)表論文：

  [1]  Yang Zhixiong, Pan Jiangling, Cheng Xue, Xiong Xiang, Ouyang Fangping. A First-Principles Study on Transport Properties of Polyacene in Zigzag Graphene Nanoribbon: Configuration, Length and Doping Effects. Journal of Applied Physics, 2019, 126(10): 104501.（Editor’s Pick）

      [2]     Yang Zhixiong, Pan Jianglin; Liu Qi, Wu Nannan, Hu Mengli, Ouyang Fangping. Electronic Structures and Transport Properties of a MoS₂-NbS₂ Nanoribbon Lateral Heterostructure. Physical Chemistry Chemical Physics, 2017, 19(2): 1303-1310.

      [3]     Ouyang Fangping; Yang Zhixiong; Ni Xiang; Wu Nannan; Chen Yu; Xiong Xiang, Hydrogenation-induced edge magnetization in armchair MoS₂ nanoribbon and electric field effects. Applied Physics Letters 2014, 104 (7)，071901.

        [4]     Ouyang Fangping; Yang Zhixiong; Peng Shenglin; Zheng Xiaojuan; Xiong Xiang, Antidot-dependent bandgap and Clar sextets in graphene antidot lattices. Physica E-Low-Dimensional Systems & Nanostructures 2014, 56, 222-226.

        [5]     Zhixiong; Yang Jinxin; Liu Qi; Xie Yuxin.; Xiong Xiang; Ouyang Fangping, Electronic Structure and Edge Modification of Armchair MoS2 Nanoribbons. Acta Physico-Chimica Sinica 2013, 29 (8), 1648-1654.

        [6]   Ouyang Fangping; Yang Zhixiong; Xiao Jin; Wu Di; Xu, Hui, Electronic Structure and Chemical Modification of Graphene Antidot Lattices. Journal of Physical Chemistry C 2010, 114 (37), 15578-15583.

        [7]     Zhou Wenzhe, Yang Zhixiong, Li Aolin, Ouyang Fangping. Spin and Valley Splittings in Janus Monolayer WSSe on Mno(111) Surface: Large Effective Zeeman Field and Opening a Helical Gap.Physical Review B, 2019.

        [8]     Zhou, Wenzhe; Chen, Jiangyong; Yang, Zhixiong; Liu, Junwei; Ouyang, Fangping, Geometry and electronic structure of monolayer, bilayer, and multilayer Janus WSSe. Physical Review B 2019, 99 (7), 075160.

        [9]     Zhu, Peng; Chen, Yu; Zhou, Yu; Yang, Zhixiong; Wu, Di; Xiong, Xiang; Ouyang, Fangping, A metallic MoS2 nanosheet array on graphene-protected Ni foam as a highly efficient electrocatalytic hydrogen evolution cathode. Journal of Materials Chemistry A 2018, 6 (34), 16458-16464.

        [10]   Hu, Mengli.; Yang, Zhixiong; Zhou, Wenzhe; Li, Aolin; Pan, Jianglin; Ouyang, Fangping, Field effect transistors based on phosphorene nanoribbon with selective edge-adsorption: A first-principles study. Physica E-Low-Dimensional Systems & Nanostructures 2018, 98, 60-65.

        [11]   Zhu, Peng; Chen, Yu; Zhou, Yu; Yang, Zhixiong; Wu, Di; Xiong, Xiang; Ouyang, Fangping, Defect-rich MoS2 nanosheets vertically grown on graphene-protected Ni foams for high efficient electrocatalytic hydrogen evolution. International Journal of Hydrogen Energy 2018, 43 (31), 14087-14095.

        [12]   Chen, Jianyong; Yang, Zhixiong; Zhou, Wenzhe; Zou, Hui; Li, Mingjun; Ouyang, Fangping, Monolayer-Trilayer Lateral Heterostructure Based Antimonene Field Effect Transistor: Better Contact and High On/Off Ratios. Phys. Status Solidi-Rapid Res. Lett. 2018, 12 (5), 6, 1800038.

聯(lián)系方式：

郵箱：clyzx@csust.edu.cn