個(gè)人簡(jiǎn)介

謝海情，男，博士，教授，博士生導(dǎo)師，湖南省青年骨干教師，長(zhǎng)沙理工大學(xué)“湖湘學(xué)者”人才計(jì)劃（青年英才II崗）。主持國家自然科學(xué)基金1項(xiàng)，湖南省自然科學(xué)基金等課題10余項(xiàng)；企業(yè)委托技術(shù)開發(fā)橫向課題7項(xiàng)（合同經(jīng)費(fèi)124萬元），完成科技成果轉(zhuǎn)化5項(xiàng)（轉(zhuǎn)化金額123萬元）。在國內(nèi)外SCI/EI收錄學(xué)術(shù)刊物發(fā)表科研論文30余篇，出版學(xué)術(shù)專著1部；授權(quán)國家發(fā)明專利5項(xiàng)、實(shí)用新型專利3項(xiàng)。

主要研究領(lǐng)域

微納傳感器與集成電路，重點(diǎn)在電源管理芯片、LED驅(qū)動(dòng)芯片、微納光電傳感器芯片等方向開展研究工作。

教學(xué)情況

主要承擔(dān)《模擬集成電路原理》、《半導(dǎo)體器件原理實(shí)驗(yàn)》、《隨機(jī)信號(hào)分析與處理》等課程的教學(xué)與建設(shè)。

代表性論文

[1]Hai-Qing Xie, Jing-Shuo Liu, Kai-Yue Cui, Xin-Yue Wang, Zhi-Qiang Fan*. High-performance Schottky-barrier field-effect transistors based on two-dimensional GaN with Ag or Au contacts, Micro and Nanostructures, 191(2024) 207863

[2]Hai-Qing Xie, Kai-Yue Cui, Xi-Ya Cai, Zhi-Qiang Fan, Dan Wu. Two-dimensional SiC Schottky junctions with symmetrical and asymmetrical metal electrode contacts, Applied Surface Science, 605 (2022) 154699

[3]Hai-Qing Xie, Xi-Ya Cai, Kai-Yue Cui, Xin-Bo Yi, Jun-Lin Lu, Zhi-Qiang Fan. High-performance monolayer or bilayer SiC short channel transistors with metallic 1T-phase MoS2 contact, Physics Letters A, 436 (2022) 128070

[4]Hai-Qing Xie, Kai-Yue Cui, Xi-Ya Cai, Zhi-Qiang Fan. P-type doping induced performance improvement of two-dimensional SiC transistors with 1T-phase MoS2 electrode, Physics Letters A, 431 (2022) 128007

[5]Hai-Qing Xie, Kai-Yue Cui, Xin-Bo Yi, Jing-Shuo Liu, Zhi-Qiang Fan. Impact of P-type doping and channel length on the performance of 2D SiC MOSFET, Micro and Nanostructures, 184 (2023) 207683

[6]H.-Q. Xie, G. Liu, and X.-Y. Cai et al., Impact of Circular Layout on Characteristics in LSAMBM APD Based on SOI Film, Silicon, 14（5）：3395–3401 (2022)

[7]Haiqing Xie*，Zhenyu Wang，Gang Liu，Junlin Lu，Xinbo Yi. A novel active-input cascode current mirror with high precision and low power dissipation. Engineering Reports, 2021, doi: 10.1002/eng2.12451

[8]Hai-Qing Xie, Dan Wu, Xiao-Qing Deng, Zhi-Qiang Fan, Wu-Xing Zhou, Chang-Qing Xiang, and Yue-Yang Liu. Simulations of Monolayer SiC Transistors with Metallic 1T-Phase MoS2 Contact for High Performance Application, Chinese Physics B, 2021,30(11): 117102

[9]Xie Hai-Qing; Li Jie-Ying; Liu Gang; Cai Xi-Ya; Fan Zhi-Qiang. Impact of Gate-Source/Drain Underlap on the Performance of Monolayer SiC Schottky-Barrier Field-Effect Transistor, IEEE T. Electron Dev., 2020, 67(10):4130-4135

[10]Hai-Qing Xie^*, Yong-Da Peng, Jie-Ying Li, Li-Juan Wu. Lateral Separate Absorption Multi-Buffer Multiplication Avalanche Photodiode Based on SOI Film, IEEE T. Electron Dev., 2019，66(7): 3003-3006

[11]Hai-Qing Xie, Jie-Ying Li, Gang Liu, Xi-Ya Cai, Zhi-Qiang Fan^*. High-Performance Schottky-Barrier Field-Effect Transistors Based on Monolayer SiC Contacting Different Metals, IEEE T. Electron Dev., 2019, 66(12):5111-5116

[12]謝海情，宜新博，曾健平，曹武，謝進(jìn)，凌佳琪. 基于神經(jīng)網(wǎng)絡(luò)的雪崩光電二極管SPICE模型構(gòu)建，湖南大學(xué)學(xué)報(bào)(自然科學(xué)版)，2023，50(10):84-89

[13]謝海情, 王振宇, 曾健平, 等.一種低溫漂高電源電壓抑制比帶隙基準(zhǔn)電壓源設(shè)計(jì), 湖南大學(xué)學(xué)報(bào)(自然科學(xué)版)，2021，48(8):119-124

聯(lián)系方式

E-mail: xiehq@csust.edu.cn

通訊地址：長(zhǎng)沙理工大學(xué)（云塘校區(qū)）理科樓C307